Method and apparatus for producing electron source

专利摘要:
An apparatus for manufacturing an electron source capable of miniaturization and simplicity of operability is provided. The container 12 which has the support member 11 which supports the board | substrate 10 in which the conductor was formed, the gas introduction port 15, and the gas exhaust port 16, and covers the partial area | region of the said board | substrate 10 surface. And means (24) for introducing a gas into the container connected to the inlet (15) of the gas, means (26) for exhausting the inside of the container (connected to an exhaust port of the gas), and the conductive Means 32 for applying a voltage to the sieve are provided.
公开号:KR20010074968A
申请号:KR1020017002891
申请日:1999-09-07
公开日:2001-08-09
发明作者:도시히꼬 다께다；마사루 가미오；마사따까 야마시따；야스에 사또；히또시 오다；게이스께 야마모또；미끼 다무라；히데시 가와사끼；가즈히로 진다이
申请人:미다라이 후지오；캐논 가부시끼가이샤；
IPC主号:

专利说明:

Manufacturing apparatus and manufacturing method of an electron source {METHOD AND APPARATUS FOR PRODUCING ELECTRON SOURCE}
[2] 2. Description of the Related Art Conventionally, two types of electron emitting devices are known which are classified into hot electron emitting devices and cold cathode electron emitting devices. Examples of cold cathode electron emitting devices include field emission type, metal / insulation layer / metal type, and surface conduction electron emission devices.
[3] The surface conduction electron emission device utilizes a phenomenon in which electron emission occurs by flowing an electric current in parallel with a film surface to a small area thin film formed on a substrate. The present applicant has made many proposals regarding the surface conduction type electron emission element which has a novel structure, and its application. The basic structure, a manufacturing method, etc. are disclosed by Unexamined-Japanese-Patent No. 7-235255, 8-171849, etc., for example.
[4] The surface conduction electron-emitting device is characterized by comprising a pair of opposing element electrodes on the substrate, and a conductive film connected to the pair of element electrodes and having an electron emission portion in a portion thereof. In addition, some cracks of the conductive film are formed.
[5] Further, at the end of the crack, a deposition film containing at least one of carbon or a carbon compound as a main component is formed.
[6] By arranging a plurality of such electron emitting elements on a substrate and connecting each electron emitting element by wiring, an electron source having a plurality of surface conduction electron emitting elements can be created.
[7] In addition, the display panel of the image forming apparatus can be formed by combining the electron source and the phosphor.
[8] Conventionally, manufacture of such an electron source panel was performed as follows.
[9] That is, as a 1st manufacturing method, first, the element which consists of an electroconductive film and a pair of element electrode connected to the said electroconductive film, and the electron source board | substrate with wiring which connected the said some element are created. Next, the entire created electron source substrate is placed in a vacuum chamber. Next, after evacuating the inside of the vacuum chamber, a voltage is applied to each of the elements through an external terminal to form cracks in the conductive film of each element. A gas containing an organic material is introduced into the vacuum chamber, and a voltage is applied to each of the devices again through an external terminal in an atmosphere in which the organic material is present to deposit carbon or a carbon compound near the crack.
[10] Moreover, as a 2nd manufacturing method, the electron source board | substrate with which the element which consists of an electroconductive film and a pair of element electrode connected to the said electroconductive film, and the wiring which connected the said some element is formed on a board | substrate is created first. Next, the created electron source substrate and the substrate on which the phosphor is arranged are bonded to each other with a supporting frame interposed therebetween to create a panel of the image forming apparatus. Thereafter, the inside of the panel is exhausted through the exhaust pipe of the panel, and a voltage is applied to each of the elements through an external terminal of the panel to form cracks in the conductive film of each element. In addition, a gas containing an organic material is introduced into the panel through the exhaust pipe, and a voltage is applied to each of the devices through an external terminal again in an atmosphere in which the organic material is present to deposit carbon or a carbon compound near the crack. Let's do it.
[11] Although the above manufacturing method is employ | adopted, the 1st manufacturing method especially requires a larger vacuum chamber and a high vacuum-compatible exhaust apparatus as an electron source substrate becomes large. Further, the second manufacturing method requires a long time for the exhaust from the panel internal space of the image forming apparatus and the introduction of the gas containing the organic material into the panel internal space.
[1] The present invention relates to a manufacturing apparatus and a manufacturing method of an electron source.
[62] 1 is a cross-sectional view showing the configuration of an apparatus for manufacturing an electron source according to the present invention.
[63] FIG. 2 is a perspective view showing a portion of the peripheral portion of the electron source substrate in FIGS. 1 and 3 broken.
[64] 3 is a cross-sectional view showing another embodiment of the configuration of the apparatus for manufacturing an electron source according to the present invention.
[65] Fig. 4 is a sectional view showing a structure having a negative vacuum container of an apparatus for manufacturing an electron source according to the present invention.
[66] Fig. 5 is a cross-sectional view showing another embodiment of the configuration having the negative vacuum container of the apparatus for manufacturing an electron source according to the present invention.
[67] Fig. 6 is a cross-sectional view showing still another embodiment of the structure having the negative vacuum container of the apparatus for manufacturing an electron source according to the present invention.
[68] 7 is a cross-sectional view showing another embodiment of the configuration of the apparatus for manufacturing an electron source according to the present invention.
[69] FIG. 8 is a perspective view showing a peripheral portion of the electron source substrate in FIG.
[70] 9 is a cross-sectional view showing another example of the apparatus for manufacturing an electron source according to the present invention.
[71] 10A and 10B are schematic views showing the shapes of the first container and the diffusion plate in FIG.
[72] Fig. 11 is a schematic diagram of a vacuum exhaust device for performing a forming and activation process of an electron source substrate using the present invention.
[73] 12 is a sectional view showing another example of the manufacturing apparatus according to the present invention.
[74] 13 is a perspective view showing another example of the manufacturing apparatus according to the present invention.
[75] 14 is a sectional view showing another example of the manufacturing apparatus according to the present invention.
[76] Fig. 15 is a perspective view showing the shape of the heat conducting member used in the apparatus for producing an electron source according to the present invention.
[77] Fig. 16 is a perspective view showing another embodiment of the shape of the heat conducting member used in the apparatus for producing an electron source according to the present invention.
[78] Fig. 17 is a sectional view showing the form of a heat conductive member using a spherical substance of rubber material used in the apparatus for producing an electron source according to the present invention.
[79] Fig. 18 is a cross-sectional view showing another embodiment of the heat conductive member using a spherical substance of rubber material used in the apparatus for producing an electron source according to the present invention.
[80] Fig. 19 is a sectional view showing the shape of a diffusion plate used in the apparatus for producing an electron source according to the present invention.
[81] Fig. 20 is a plan view showing the shape of a diffusion plate used in the apparatus for producing an electron source according to the present invention.
[82] Fig. 21 is a perspective view showing part of the configuration of the image forming apparatus by breaking.
[83] Fig. 22 is a plan view showing the structure of the electron-emitting device according to the present invention.
[84] FIG. 23 is a cross-sectional view taken along line B-B 'of FIG. 22 showing a structure of an electron emitting device according to the present invention.
[85] Fig. 24 is a plan view showing an electron source according to the present invention.
[86] Fig. 25 is a plan view for explaining a method for producing an electron source according to the present invention.
[12] An object of the present invention is to provide an apparatus for producing an electron source, which can be downsized and simplified in operability.
[13] Moreover, an object of this invention is to provide the manufacturing method of the electron source suitable for mass productivity by improving a manufacturing speed.
[14] Moreover, an object of this invention is to provide the manufacturing apparatus and manufacturing method of an electron source which can manufacture the electron source excellent in the electron emission characteristic.
[15] Moreover, the manufacturing apparatus of the electron source by this invention is a support member which supports the board | substrate with which the conductor was formed, the container which has a gas inlet and a gas exhaust port, and covers the partial area | region of the said board | substrate, and the said gas introduction. Means for introducing a gas into the vessel connected to the sphere, means for exhausting the interior of the vessel connected to the exhaust port of the gas, and means for applying a voltage to the conductor.
[16] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is equipped with the means to fix the said board | substrate on the said support member.
[17] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is provided with the means which vacuum-adsorbs the said board | substrate and the said support member.
[18] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is provided with the means which electrostatically adsorb | sucks the said board | substrate and the said support member.
[19] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is equipped with the heat conductive member.
[20] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is equipped with the temperature control mechanism of the said board | substrate.
[21] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is equipped with the heat generating means.
[22] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said support member is equipped with the cooling means.
[23] Moreover, the manufacturing apparatus of the electron source by this invention is a manufacturing apparatus of the said electron source, The said container is provided with the means which diffuses the gas introduce | transduced in the said container.
[24] Moreover, the manufacturing apparatus of the electron source by this invention is further equipped with the means for heating the gas introduce | transduced in the manufacturing apparatus of the said electron source.
[25] Moreover, the manufacturing apparatus of the electron source by this invention is further equipped with the means for removing the moisture in the gas introduce | transduced in the manufacturing apparatus of the said electron source.
[26] The method for manufacturing an electron source according to the present invention includes the steps of arranging a substrate on which a conductor and a wiring connected to the conductor are formed on a support member, and covering the conductor on the substrate with a container except a part of the wiring. And a step of applying a voltage to the conductor through the wiring of the part, and a step of setting the inside of the container to a desired atmosphere.
[27] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a desired atmosphere includes the process of exhausting the inside of the said container.
[28] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a desired atmosphere includes the process of introducing gas into the said container.
[29] Moreover, the manufacturing method of the electron source by this invention has a process of fixing the said board | substrate on the said support member in the manufacturing method of the said electron source.
[30] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of fixing the said board | substrate on the said support member includes the process of vacuum-absorbing the said board | substrate and the said support member.
[31] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of fixing the said board | substrate on the said support member includes the process of electrostatically adsorb | sucking the said board | substrate and the said support member.
[32] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of arrange | positioning the said board | substrate on the said support member is performed by arrange | positioning a heat conductive member between the said board | substrate and the said support member.
[33] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said conductor includes the process of adjusting the temperature of the said board | substrate.
[34] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said conductor includes the process of heating the said board | substrate.
[35] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said conductor includes the process of cooling the said board | substrate.
[36] Moreover, the manufacturing method of the electron source which concerns on this invention supports the board | substrate with which the some of elements provided with a pair of electrodes and the electroconductive film arrange | positioned between the said pair of electrodes, and the board | substrate with wiring which connect the said several elements were formed. A process of disposing on the substrate, a process of covering a plurality of elements on the substrate except for a portion of the wiring with a container, a process of making the interior of the container into a desired atmosphere, and the plurality of devices through the wiring of the portion It has a process of applying a voltage to it.
[37] Moreover, the manufacturing method of the electron source which concerns on this invention is a some X element wiring which matrix-wired several of the element provided with a pair of electrode and the electroconductive film arrange | positioned between the said pair of electrode, and the said some element. And arranging a substrate on which a plurality of Y-directional wirings are formed on a support member, and covering a plurality of elements on the substrate with a container except for the plurality of X-directional wirings and a part of the plurality of Y-directional wirings; And a step of applying the voltage to the plurality of elements through the X-direction wiring and the Y-direction wiring of the portion, the process of making the interior of the container a desired atmosphere.
[38] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a desired atmosphere includes the process of exhausting the inside of the said container.
[39] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a desired atmosphere includes the process of introducing gas into the said container.
[40] Moreover, the manufacturing method of the electron source by this invention has a process of fixing the said board | substrate on the said support member in the manufacturing method of the said electron source.
[41] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of fixing the said board | substrate on the said support member includes the process of vacuum-absorbing the said board | substrate and the said support member.
[42] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of fixing the said board | substrate on the said support member includes the process of electrostatically adsorb | sucking the said board | substrate and the said support member.
[43] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of arrange | positioning the said board | substrate on the said support member is performed by arrange | positioning a heat conductive member between the said board | substrate and the said support member.
[44] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of adjusting the temperature of the said board | substrate.
[45] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of heating the said board | substrate.
[46] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of cooling the said board | substrate.
[47] Moreover, the manufacturing method of the electron source which concerns on this invention supports the board | substrate with which the some of elements provided with a pair of electrodes and the electroconductive film arrange | positioned between the said pair of electrodes, and the board | substrate with wiring which connect the said several elements were formed. A process of disposing on the substrate, a process of covering a plurality of elements on the substrate except for a portion of the wiring with a container, a process of making the inside of the container into a first atmosphere, and the plurality of wirings A step of applying a voltage to the device under the first atmosphere, a step of making the inside of the container a second atmosphere, and a step of applying a voltage to the plurality of devices under the second atmosphere via the partial wirings It is characterized by.
[48] Moreover, the manufacturing method of the electron source which concerns on this invention is a some X element wiring which matrix-wired several of the element provided with a pair of electrode and the electroconductive film arrange | positioned between the said pair of electrode, and the said some element. And arranging a substrate on which a plurality of Y-directional wirings are formed on a support member, and covering a plurality of elements on the substrate with a container except for the plurality of X-directional wirings and a part of the plurality of Y-directional wirings; And a step of applying the inside of the container to the first atmosphere, applying a voltage to the plurality of devices under the first atmosphere through the X-direction wiring and the Y-direction wiring of the part, and the inside of the container to the second. And a step of applying a voltage to the plurality of devices under the second atmosphere through the step of setting the atmosphere and the X-direction wiring and the Y-direction wiring of the part.
[49] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a 1st atmosphere includes the process of exhausting the inside of the said container.
[50] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of making the inside of the said container into a 2nd atmosphere includes the process of introducing the gas containing a carbon compound in the said container.
[51] Moreover, the manufacturing method of the electron source by this invention has a process of fixing the said board | substrate on the said support member in the manufacturing method of the said electron source.
[52] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of fixing the said board | substrate on the said support member includes the process of vacuum-absorbing the said board | substrate and the said support member.
[53] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of fixing the said board | substrate on the said support member includes the process of electrostatically adsorb | sucking the said board | substrate and the said support member.
[54] Moreover, in the manufacturing method of the electron source by this invention, in the manufacturing method of the said electron source, the process of arrange | positioning the said board | substrate on the said support member is performed by arrange | positioning a heat conductive member between the said board | substrate and the said support member.
[55] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of adjusting the temperature of the said board | substrate.
[56] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of heating the said board | substrate.
[57] Moreover, the manufacturing method of the electron source by this invention is a manufacturing method of the said electron source, The process of applying a voltage to the said element includes the process of cooling the said board | substrate.
[58] The present invention will be described in more detail below.
[59] The manufacturing apparatus of this invention is equipped with the support member for supporting the board | substrate with which the conductor was previously formed previously, and the container which coat | covers the said board | substrate top supported by the said support member. Here, the container covers a portion of the surface of the substrate, whereby a portion of the wiring connected to the conductor on the substrate and formed on the substrate is exposed on the outside of the container. It can form an airtight space. The vessel is provided with a gas introduction port and a gas exhaust port, and means for introducing a gas into the container and means for discharging the gas in the container are connected to the introduction port and the exhaust port, respectively. Thereby, the inside of the said container can be set to a desired atmosphere. The substrate on which the conductor is formed in advance is a substrate which forms an electron emission section on the conductor and serves as an electron source by performing electrical treatment. Thus, the manufacturing apparatus of the present invention also includes means for performing electrical treatment, for example, means for applying a voltage to the conductor.
[60] In the above manufacturing apparatus, miniaturization is achieved, and the operability such as electrical connection with the power source in the electrical treatment is simplified, and the degree of freedom in designing the size and shape of the container is increased, so that the gas in the container is increased. Introduction and discharge of the gas to the outside of the container can be performed in a short time.
[61] Moreover, in the manufacturing method of this invention, the board | substrate with which the conductor and the wiring connected to the said conductor were previously formed is arrange | positioned on a support member, and the conductor on the said board | substrate is covered with a container except a part of the said wiring. As a result, a part of the wiring formed on the substrate is exposed to the outside of the container, and the conductor is arranged in an airtight space formed on the substrate. Next, the inside of the container is made a desired atmosphere, and electrical treatment, for example, application of a voltage to the conductor is performed through a part of wiring exposed to the outside of the container. Here, the desired atmosphere is, for example, a reduced pressure atmosphere or an atmosphere in which a specific gas is present. The electrical treatment is a treatment in which an electron emission portion is formed in the conductor to form an electron source. In addition, the electrical treatment may be performed a plurality of times under different atmospheres. For example, a step of covering the conductor on the substrate except for a portion of the wiring with a container, first performing the electrical treatment with the interior of the container as the first atmosphere, and then the second interior of the container. A process of performing the above electrical treatment is carried out in an atmosphere, whereby a good electron emission portion is formed in the conductor, thereby producing an electron source. The first and second atmospheres are preferably atmospheres in which the first atmosphere is reduced in pressure as described later, and the second atmosphere is an atmosphere in which a specific gas such as a carbon compound is present. In the above manufacturing method, electrical connection with the power supply in the above electrical processing can be easily performed. In addition, since the degree of freedom in design, such as the size and shape of the container, is increased, introduction of gas into the container and discharge of the gas to the outside of the container can be performed in a short time, and in addition to improving the manufacturing speed, The reproducibility of electron emission characteristics, in particular, the uniformity of electron emission characteristics in an electron source having a plurality of electron emission portions is improved.
[87] BRIEF DESCRIPTION OF DRAWINGS To describe the invention in more detail, this is described in accordance with the accompanying drawings.
[88] First, a first preferred embodiment of the present invention is shown.
[89] 1, 2, and 3 show an electron source manufacturing apparatus according to the present embodiment, in which Figs. 1 and 3 are sectional views, and Fig. 2 is a perspective view showing a peripheral portion of the electron source substrate in Fig. 1. to be. 1, 2, and 3, reference numeral 6 denotes a conductor made of an electron emission element, 7 denotes an X-direction wire, 8 denotes a Y-direction wire, 10 denotes an electron source substrate, 11 denotes a support member, and 12 denotes a vacuum container. , 15 is gas inlet, 16 is exhaust port, 18 is sealing member, 19 is diffuser plate, 20 is heater, 21 is hydrogen or organic substance gas, 22 is carrier gas, 23 is moisture removal filter, 24 is gas flow control Apparatus, 25a to 25f are valves, 26 is a vacuum pump, 27 is a vacuum gauge, 28 is a piping, 30 is a drive driver consisting of a takeout wiring, 32 is a power supply and a current control system, 31 is a drive with the takeout wiring 30 of the electron source substrate. Wiring for connecting the driver, 33 is an opening of the diffusion plate 19, 41 is a heat conductive member.
[90] The support member 11 holds and fixes the electron source substrate 10, and has a mechanism for mechanically fixing the electron source substrate 10 by a vacuum chucking mechanism, an electrostatic chucking mechanism, a fixing jig, or the like. The heater 20 is provided in the support member 11, and the electron source substrate 10 can be heated through the heat conductive member 41 as needed.
[91] The heat conductive member 41 is provided on the support member 11 and is sandwiched between the support member 11 and the electron source substrate 10 so as not to interfere with a mechanism for holding and fixing the electron source substrate 10. Or may be provided so that the support member 11 may be embedded.
[92] The heat conduction member absorbs the warpage and the ups and downs of the electron source substrate, can reliably transmit heat to the support member or a subvacuum container described later to radiate heat in the electrical treatment process to the electron source substrate. It is possible to prevent the occurrence of cracks and breakage, and contribute to the improvement of production yield.
[93] In addition, by rapidly and reliably dissipating the heat generated in the electrical treatment process, it is possible to contribute to the reduction of the concentration distribution of the introduced gas according to the temperature distribution and the reduction of the nonuniformity of the device influenced by the thermal distribution of the substrate. It is possible to manufacture an excellent electron source.
[94] As the heat conductive member 41, a viscous liquid substance such as silicone lubricating oil, silicone oil, or gel-like substance can be used. When there is a problem in which the thermally conductive member 41, which is a viscous liquid material, moves on the support member 11, the viscous liquid material is supported at the predetermined position and region of the support member 11, that is, at least by the electron source substrate 10. The retention mechanism may be provided in the support member 11 in accordance with the region so as to stay under the sieve 6 formation region. This can be configured, for example, as a zero-ring or heat-conductive member sealed by putting a viscous liquid substance in a heat-resistant bag.
[95] In the case where the viscous liquid material is retained by installing an O-ring or the like, if an air layer is formed between the substrate and it is not contacted correctly, the viscous liquid material is allowed to pass between the substrate and the support member after the air escape through hole or the electron source substrate is installed. The method of injecting into can also be employ | adopted. 3 is a schematic cross-sectional view of an apparatus in which a zero ring and a viscous liquid material inlet are provided so that the viscous liquid material stays in a predetermined region.
[96] The heater 20 is a sealed tubular shape, in which a temperature control medium is enclosed. Although not shown, if a mechanism for circulating the viscous liquid substance between the support member 11 and the electron source substrate 10 and circulating with temperature control is provided, the electron source substrate instead of the heater 20 is provided. It becomes a heating means or cooling means of (10). Moreover, the mechanism which consists of a circulating-type temperature control apparatus, a liquid medium, etc. which can perform temperature control with respect to the target temperature can be provided, for example.
[97] The heat conductive member 41 may be an elastic member. As a material of an elastic member, synthetic resin materials, such as Teflon resin, rubber materials, such as silicone rubber, ceramic materials, such as alumina, metal materials of copper and aluminum, etc. can be used. These may be used in a sheet form or a divided sheet form. Alternatively, as shown in Figs. 15 and 16, columnar shapes such as columnar and prismatic columns, and projections such as linear and conical shapes extending in the X or Y direction in accordance with the wiring of the electron source substrate, spherical bodies and rugby balls A spherical body such as a shape (elliptic spherical body) or a spherical body of a shape in which protrusions are formed on the surface of the spherical body may be provided on the support member.
[98] Fig. 17 is a configuration diagram of a spherical heat conducting member using a plurality of elastic members. Here, the microspheres 1701 which are easily deformable, such as a member of a rubber material, and the spherical material 1702 (the spherical material which is harder to deform than a member of a rubber material) are smaller than the diameter of this microsphere, and the electron source board | substrate 10 ) And the support member 11 are dispersed and sandwiched to form the heat conductive member 41.
[99] Fig. 18 is a schematic view of the structure of the composite thermally conductive member. The center member 1801 is comprised by hard members, such as a ceramic member and a metal member, and the heat conductive member 41 is comprised by using what covered the spherical surface of this heat conductive member with the rubber member 1802. When using a spherical substance or the like that is easy to move on the support member 11, a configuration in which the retention mechanism is provided on the support member 11 as described for the case where a viscous liquid substance is used is preferable.
[100] And the uneven | corrugated shape may be formed in the surface which opposes an electron source substrate of an elastic member. The uneven shape is preferably a columnar shape, a linear shape, a projection shape, a spherical shape (semi-spherical shape), or the like. Specifically, a linear concave-convex shape approximately aligned with the position of the X-direction wiring or the Y-direction wiring of the electron source substrate as shown in FIG. 15, or a pillar approximately aligned with the position of each element electrode as shown in FIG. It is preferable that the uneven shape of the mold or the hemispherical uneven shape is formed on the surface of the heat conductive member although not shown.
[101] The vacuum vessel 12 is a vessel made of glass or stainless steel, and is preferably made of a material having a low emission gas from the vessel. The vacuum vessel 12 covers the region where the conductors 6 are formed except for the extraction wiring portion of the electron source substrate 10, and at least 1.33 × 10 ⁻¹ Pa (1 × 10 ⁻³ Torr) at atmospheric pressure It is structure that can endure range.
[102] The sealing member 18 is for maintaining the airtightness of the electron source board | substrate 10 and the vacuum container 12, and a 0 ring, a rubber | gum sheet, etc. are used.
[103] As the organic substance gas 21, an organic substance used for activation of an electron-emitting device described later, or a mixed gas obtained by diluting the organic substance with nitrogen, helium, argon, or the like is used. Moreover, when carrying out the electricity supply process of the foaming mentioned later, the gas for promoting the formation of a crack in a conductive film, for example, hydrogen gas which has a reducing property, etc. may be introduce | transduced into the vacuum container 12. As shown in FIG. Thus, when introducing gas in another process, it can be used, if the vacuum container 12 is connected to the piping 28 using the introduction piping and the valve member 25e.
[104] Organic materials used for activating the electron-emitting device include aliphatic hydrocarbons of alkanes, alkenes, and alkynes, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, nitriles, phenols, carbons, sulfonic acids, and the like. For example. More specifically, saturated hydrocarbons represented by C _n H _{2n + 2} such as methane, ethane, propane, unsaturated hydrocarbons represented by composition _formulas such as C _n H _2n such as ethylene, propylene, benzene, toluene, methanol, ethanol, Acetaldehyde, acetone, methyl ethyl ketone, methyl amine, ethyl amine, phenol, benzonitrile, acetonitrile and the like can be used.
[105] The organic gas 21 may be used as it is when the organic material is a gas at room temperature. When the organic material is a liquid or solid at room temperature, the organic gas 21 may be used by evaporation or sublimation in a container, or mixed with a diluent gas. It can be used as a method.
[106] Nitrogen or an inert gas such as argon or helium is used for the carrier gas 22.
[107] The organic substance gas 21 and the carrier gas 22 are mixed in a constant ratio and introduced into the vacuum vessel 12. Both the flow rate and the mixing ratio are controlled by the gas flow rate control device 24. The gas flow rate control device 24 is composed of a mass flow rate controller, a solenoid valve, and the like. These mixed gases are heated to an appropriate temperature by a heater (not shown) provided around the pipe 28 as necessary, and are then introduced into the vacuum vessel 12 from the inlet 15. The heating temperature of the mixed gas is preferably equal to the temperature of the electron source substrate 10.
[108] Moreover, it is more preferable to provide the water removal filter 23 in the middle of the piping 28, and to remove the water in the inlet gas. As the water removal filter 23, a hygroscopic material such as silica gel, molecular sieve and magnesium hydroxide can be used.
[109] The mixed gas introduced into the vacuum vessel 12 is exhausted by the vacuum pump 26 through the exhaust port 16 at a constant exhaust rate, and the pressure of the mixed gas in the vacuum vessel 12 is kept constant. The vacuum pump 26 used in the present invention is a low vacuum pump such as a dry pump, a diaphragm pump, a scroll pump, and a pump that does not use oil is preferably used.
[110] Although it originates also in the kind of organic substance used for activation, in this embodiment, the pressure of the said mixed gas becomes so small that the average free path ((lambda)) of the gas molecules which comprise the mixed gas becomes small enough compared with the inside size of the vacuum container 12. It is preferable from the viewpoint of shortening of time and improvement of uniformity of an activation process that it is more than the pressure of a grade. This is the so-called viscous flow region and the atmospheric pressure from several hundred Pa (a few Torr).
[111] In addition, when the diffusion plate 19 is provided between the gas inlet 15 of the vacuum vessel 12 and the electron source substrate 10, the flow of the mixed gas is controlled, and the organic material is uniformly supplied to the entire surface of the substrate. Since the uniformity of an electron emitting element improves, it is preferable. As the diffusion plate 19, as shown in FIGS. 1 and 3, a metal plate having an opening 33 and the like are used. As shown in Figs. 19 and 20, the method of forming the openings 33 of the diffusion plate 19 is to change the area of the openings in the vicinity of the inlet and away from the inlet, or by changing the number of the openings. It is preferable to form.
[112] As shown in Fig. 20 in the diffusion plate 19, the larger the area of the opening is, the larger the area of the opening is. The flow rate of the mixed gas which flows inside the container 12 becomes substantially constant, and is more preferable at the uniformity improvement surface. However, it is important to make the diffuser plate 19 into the shape which considered the characteristic of viscous flow, and is not limited to the shape described in this specification.
[113] For example, the openings 33 may be formed in concentric circles at equal intervals and at equal angle intervals in the circumferential direction, and the opening area of the openings may be set to satisfy the following equation. Here, the opening area is set to be large in proportion to the distance from the gas inlet. Thereby, the introduction material can be supplied with good uniformity by the electron source substrate surface, and the electron emission element can be activated with good uniformity.
[114] S _d = S _o × [1 + (d / L) ² ] ^1/2
[115] only,
[116] d: distance from the intersection of the extension line and the diffusion plate from the center of the gas inlet
[117] L: Distance from the center of the gas inlet to the intersection of the extension line and the diffuser plate from the center of the gas inlet
[118] S _d : From the intersection of the extension line from the center of the gas inlet and the diffuser plate
[119] Opening area in distance d
[120] S _o : Opening area at the intersection of the extension line from the center of the gas inlet and the diffusion plate
[121] The position of the gas inlet 15 and the exhaust port 16 is not limited to the present embodiment and can take various forms. However, in order to uniformly supply the organic material into the vacuum container 12, the gas inlet 15 is provided. And the exhaust port 16 are preferably located at different positions in the vacuum container 12, as shown in Figs. 1 and 3, and at different positions from side to side as shown in Fig. 6, and also in a substantially symmetrical position. More preferred.
[122] The extraction electrode 30 of the electron source substrate is outside the vacuum container 12, is connected to the wiring 30 using a TAB wiring, a probe, or the like, and is connected to the driving driver 32.
[123] Also in this embodiment or embodiment mentioned later, it is the same, but since a vacuum container only needs to coat | cover the conductor 6 on an electron source board | substrate, the apparatus can be miniaturized. In addition, since the wiring portion of the electron source substrate is outside the vacuum container, electrical connection between the electron source substrate and the power supply device (drive driver) for performing electrical processing can be easily performed.
[124] The pulse voltage is applied to each electron-emitting device on the substrate 10 through the wiring 31 using the drive driver 32 in a state where the mixed gas containing the organic substance is flowed into the vacuum container 12 as described above. By doing so, the electron-emitting device can be activated.
[125] Hereinafter, 2nd Embodiment of this invention is described. This embodiment mainly changes the supporting method of the electron source substrate 10 in the first embodiment, and the rest of the configuration can be the same as in the first embodiment. 4 and 5 show a second preferred embodiment of the present invention. 4 and 5, reference numeral 13 denotes a vacuum container, 14 a negative vacuum container, and 17 a vent port of the negative vacuum container 14. In addition, the same numbers as those in Figs.
[126] In the first embodiment, in the case where the size of the electron source substrate 10 is large, the difference in pressure between the front side and the back side of the electron source substrate 10, that is, the pressure difference between the pressure in the vacuum vessel 12 and the atmospheric pressure In order to prevent damage to the original substrate 10, the thickness of the electron source substrate 10 can be made to withstand the pressure difference, or the pressure difference can be alleviated by using the vacuum chucking method of the electron source substrate 10 together. To make it work.
[127] The second embodiment is an embodiment in which the pressure difference generated between the electron source substrates 10 is eliminated or made small so as not to be a problem. In this embodiment, the electron source substrates 10 Can be made thin, and when the electron source substrate 10 is applied to an image forming apparatus, the image forming apparatus can be reduced in weight. In this embodiment, the vacuum container 12 is held between the vacuum chamber 12 and the vacuum chamber 14 via the electron source substrate 10. Instead of the supporting member 11 in the first embodiment, the vacuum chamber ( The electron source substrate 10 is horizontally maintained by maintaining the pressure in the chamber 14 approximately equal to the pressure of the vacuum container 12.
[128] The pressure inside the vacuum chamber 12 and the inside of the subvacuum container 14 are set by the vacuum gauges 27a and 27b, respectively, and by adjusting the opening and closing degree of the valve 25g of the exhaust port of the subvacuum container 14. The pressure in both vacuum containers 12 and 14 can be made substantially the same.
[129] In Fig. 4, inside the subvacuum container 14, the sheet-shaped first heat conducting member 41 made of the same material as the sealing material 18 as the heat conducting member of the electron source substrate 10, and from the electron source substrate 10, respectively. A second heat conductive member 42 made of a metal having a high thermal conductivity is provided so that heat generated by the heat conduction member 41 can be more efficiently radiated to the outside via the subvacuum container 14 more efficiently. In addition, in FIG.4 and FIG.5, the thickness of the subvacuum container 14 is described to be larger than it is actually so that the outline of the apparatus may be more easily understood.
[130] A heater is embedded in the second heat conductive member 42 so as to heat the electron source substrate 10, and temperature control can be performed from the outside by a control mechanism (not shown).
[131] In addition, a tubular hermetically sealed container capable of holding or circulating a fluid is built in the second heat conductive member 42, and the electron source substrate 10 is controlled by the first heat conductive member (by controlling the temperature of the fluid from the outside). It may also be cooled or heated via 41). In addition, a heater is provided at the bottom of the subvacuum container 14 or a control mechanism (not shown) is embedded in the bottom of the bottom part to control the temperature from the outside so that the second heat conductive member 42 and the first heat conductive member ( The electron source substrate 10 can be heated via 41. Alternatively, the heating means as described above may be provided in both the second heat conductive member 42 and the subvacuum container 14 to perform temperature control such as heating or cooling the electron source substrate 10. .
[132] Although two types of heat conductive members 41 and 42 are used in this embodiment, the heat conductive member may be comprised by one type of heat conductive member or three or more types of heat conductive members, and is not limited to this embodiment.
[133] The positions of the gas inlet 15 and the exhaust port 16 are not limited to those shown in the present embodiment, but can take various forms. However, in order to uniformly supply the organic material into the vacuum container 12, the positions of the gas inlet 15 and the exhaust port 16 are located in the vacuum container 12 as shown in FIGS. 4 and 5. Or a vacuum container of the form as shown in FIG. 6 presented in the first embodiment, preferably at different positions from left to right, and more preferably at a substantially symmetrical position.
[134] Also in this embodiment, when it has the process of introducing gas into the vacuum container 12 similarly to 1st Embodiment mentioned above, the diffuser plate 19 described in 1st Embodiment is the same as that of the said 1st Embodiment. It is preferable to use as. In addition, a pulse voltage is applied to each electron-emitting device on the electron source substrate 10 through the wiring 31 using the drive driver 32 in a state where a mixed gas containing an organic material is flown, thereby providing an electron-emitting device. An activation process can also be performed similarly to the said 1st Embodiment.
[135] Also in the present embodiment, as in the first embodiment, electrons are formed through the wiring 31 by using the drive driver 32 in the form of a forming process or a mixed gas containing an organic substance in the vacuum container 12. By applying a pulse voltage to each electron-emitting device on the original substrate 10, the electron-emitting device can be activated.
[136] Next, a third embodiment of the present invention will be described with reference to FIG. In this embodiment, the electrostatic chuck 208 is provided in the substrate holder 207 in order to prevent deformation or damage of the substrate due to the pressure difference between the front and back surfaces of the substrate. The fixing of the substrate by the electrostatic chuck applies a voltage between the electrode 209 and the substrate 10 placed in the electrostatic chuck to attract the substrate 10 to the substrate holder 208 by electrostatic power. In order to maintain a predetermined potential on the substrate 10 at a predetermined value, a conductive film such as an IT0 film is formed on the back surface of the substrate. Moreover, in order to adsorb | suck a board | substrate by an electrostatic chuck system, the distance of the electrode 209 and a board | substrate needs to be short, and it is preferable to press the board | substrate 10 to the electrostatic chuck 208 once by another method. In the apparatus shown in Fig. 14, the inside of the groove 211 formed on the surface of the electrostatic chuck 208 is exhausted to press the substrate 10 to the electrostatic chuck by atmospheric pressure, and the electrode 209 by the high voltage power supply 210. The substrate is sufficiently adsorbed by applying a high voltage to the substrate. After that, even if the inside of the vacuum chamber 202 is exhausted, the pressure difference applied to the substrate is canceled by the electrostatic force by the electrostatic chuck, so that the substrate can be prevented from being deformed or damaged. In order to increase the thermal conductivity between the electrostatic chuck 208 and the substrate 10, it is preferable to introduce a gas for heat exchange into the grooves 211 once exhausted as described above. He is preferred as the gas, but other gases are also effective. By introducing a gas for heat exchange, not only the heat conduction between the substrate 10 and the electrostatic chuck 208 in the groove 211 is possible, but also the substrate 10 by simply mechanical contact in the grooveless portion. Since the thermal conductivity becomes larger as compared with the case where the electrostatic chuck 208 is in thermal contact, the overall thermal conductivity is greatly improved. Accordingly, when performing a process such as forming or activation, heat generated in the substrate 10 easily moves to the substrate holder 207 via the electrostatic chuck 208 so that the temperature rise of the substrate 10 and the local heat In addition to suppressing the occurrence of the temperature distribution due to the occurrence, by providing a temperature control means such as a heater 212 or a cooling unit 213 in the substrate holder, it is possible to control the temperature of the substrate with higher accuracy.
[137] The specific example of the manufacturing method of the electron source using the manufacturing apparatus mentioned above is described in detail below.
[138] By combining the electron source and the image forming member, an image forming apparatus as shown in Fig. 21 can be formed. 21 is a schematic diagram of an image forming apparatus. In Fig. 21, reference numeral 69 denotes an electron emission element, 61 a rear plate fixing the electron source substrate 10, 62 a support member, 66 a glass substrate 63, a metal back 64 and a phosphor 65. A face plate, 67 is a high voltage terminal, and 68 is an image forming apparatus.
[139] In the image forming apparatus, each of the electron emitting elements is discharged by applying the scanning signal and the modulating signal by the signal generating means (not shown) through the container outer terminals Dx1 to Dxm and Dy1 to Dyn, respectively, so that the high voltage terminal 67 An image is displayed by applying a high voltage of 5 kV to the metal bag 65 or the transparent electrode (not shown), accelerating the electron beam, colliding with the phosphor film 64, and exciting and emitting light.
[140] Moreover, the electron source board | substrate 10 itself may also be comprised from one board | substrate which also serves as a back plate. Note that the scan signal wiring may be one scan wiring as shown in Fig. 21, for example, as long as the number of elements does not affect the applied voltage drop between the electron emitting element close to the container outer terminal of Dx1 and the distant electron emitting element. However, when the number of elements is large and there is an influence of the voltage drop, a method of widening the wiring width, increasing the thickness of the wiring, or applying a voltage from both sides can be adopted.
[141] [Example]
[142] EMBODIMENT OF THE INVENTION Hereafter, although this invention is demonstrated in detail, a specific example is given, this invention is not limited to these specific example, Comprising: The substitution of each element and the design change within the range in which the objective of this invention are achieved are included. .
[143] [Example 1]
[144] This embodiment manufactures the electron source shown in FIG. 24 having a plurality of surface conduction electron-emitting devices shown in FIGS. 22 and 23 by using the manufacturing apparatus according to the present invention. 22 to 24, reference numeral 101 denotes a substrate, 2 and 3 element electrodes, 4 a conductive film, 29 a carbon film, 5 a gap between the carbon film 29, and G a gap between the conductive films 4. to be. The Pt paste was printed on the glass substrate (size 350 x 300 mm, thickness 5 mm) on which the Si0 ₂ layer was formed by an offset printing method, and thermally baked to obtain device electrodes 2 and 3 having a thickness of 50 nm shown in FIG. Formed). Further, Ag paste is printed by screen printing method and heated and fired to form the X direction wirings 7 (240) and the Y direction wirings 8 (720) shown in FIG. At the intersection of 7) and the Y-direction wiring 8, an insulating paste was printed by screen printing and heated and baked to form the insulating layer 9.
[145] Next, a palladium inorganic solution is added dropwise between the device electrodes 2 and 3 using a bubble jet spray apparatus, and heated at 350 ° C. for 30 minutes to form fine particles of palladium oxide (4). Formed). The film thickness of the conductive film 4 was 20 nm. As described above, the electron source substrate 10 in which a plurality of conductors composed of the pair of element electrodes 2 and 3 and the conductive film 4 are matrix-wired by the X-direction wiring 7 and the Y-direction wiring 8. )
[146] As a result of observing the warpage and the undulation of the substrate, a state in which the periphery was bent about 0.5 mm with respect to the center portion of the substrate by the warpage and the undulation of the substrate, which is thought to be caused by the warpage, the undulation, and the heating process up to and including the substrate itself It was.
[147] The created electron source substrate 10 was fixed on the support member 11 of the manufacturing apparatus shown in FIGS. 1 and 2. A thermally conductive rubber sheet 41 having a thickness of 1.5 mm is sandwiched between the supporting member 11 and the electron source substrate 10.
[148] Next, the vacuum vessel 12 made of stainless steel is sealed via the sealing member 18 made of silicone rubber so that the take-out wiring 30 comes out of the vacuum vessel 12, as shown in FIG. It was installed on the electron source substrate 10. On the electron source substrate 10, a metal plate having an opening 33 as shown in Figs. 19 and 20 was provided as the diffusion plate 19. As shown in Figs.
[149] The valve 25f on the exhaust port 16 side is opened, and the inside of the vacuum vessel 12 is evacuated to about 1.33 × 10 ⁻¹ Pa (1 × 10 ⁻³ Torr) with the vacuum pump 26 (here, a scroll pump). In order to remove the water which is thought to be attached to the piping of the exhaust device or the electron source substrate, the temperature is raised to 120 ° C. using a piping heater (not shown) and the heater 20 for the electron source substrate 10 and maintained for 2 hours. After cooling, the mixture was gradually cooled to room temperature.
[150] After the temperature of the substrate has returned to room temperature, the X-direction wiring 7 and the Y-direction wiring 8 are made using the drive driver 32 connected to the take-out wiring 30 via the wiring 31 shown in FIG. The conductive film was formed by applying a voltage between the element electrodes 2 and 3 of each electron emission element 6 through the gap, and the gap G shown in FIG. 23 was formed in the conductive film 4.
[151] Subsequently, the activation process was performed using the same apparatus. The gas supply valves 25a to 25d shown in FIG. 1 and the valve 25e on the gas inlet 15 side are opened, and the mixed gas of the organic substance gas 21 and the carrier gas 22 is discharged into a vacuum container ( 12) introduced within. 1% ethylene mixed nitrogen gas was used for the organic substance gas 21, and nitrogen gas was used for the carrier gas 22. As shown in FIG. Both flow rates were 40 sccm and 400 sccm, respectively. The opening and closing degree of the valve 25f was adjusted while watching the pressure of the vacuum gauge 27 on the exhaust port 16 side, so that the pressure in the vacuum vessel 12 was 133 10 ⁴ Pa (100 Torr).
[152] About 30 minutes after the start of the introduction of the organic substance gas, between the electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 using the drive driver 32. The activation process was performed by applying a voltage. The voltage was controlled to step up from 10 V to 17 V in about 25 minutes, the pulse width was 1 msec, the frequency was 100 Hz, and the activation time was 30 minutes. Activation is performed by connecting the unselected lines of the entire Y-direction wiring 8 and the X-direction wiring 7 to Gnd (ground potential), and selecting 10 lines of the X-direction wiring 7 by one line. The pulse voltage of 1 msec was applied sequentially, and the above-mentioned method was repeated to activate the entire line in the X direction. Since it was performed by the said method, 12 hours were required for activation of all the lines.
[153] The device current If at the end of the activation process (the current flowing between the device electrodes of the electron-emitting device) was measured for each X-direction wiring and the device current If values were compared, and the values were about 1.35A to 1.56A, On the average, it was 1.45 A (corresponding to about 2 mA per device), the variation of each wiring was about 8%, and good activation could be performed.
[154] In the electron emission element after the activation process is completed, as shown in Figs. 22 and 23, a carbon film 29 was formed with a gap 5 therebetween.
[155] In addition, when the gas analysis of the exhaust port 16 side was performed using the mass spectrum measuring apparatus equipped with the differential exhaust apparatus not shown at the time of the said activation process, the mass No.28 of nitrogen and ethylene was introduced simultaneously with the said mixed gas introduction. Mass No. 26 of the fragment of and ethylene was instantaneously increased and saturated, and both values were constant during the activation process.
[156] After fixing the electron source substrate 10 shown in FIG. 25 which is the same as the specific example 1 on the back plate 61 as shown in FIG. 21 which is a schematic diagram of an image forming apparatus, 5 mm upward of the electron source substrate 10 The face plate 66 is disposed through a support frame 62 and an exhaust pipe and getter material (not shown) having an inner diameter of 10 mm and an outer diameter of 14 mm, and sealed at 420 ° C. in an argon atmosphere using frit glass. 21, the time required for the manufacturing process can be shortened as compared with the above forming process and the activation process in which the shape of the image forming apparatus as shown in FIG. 21 is performed. The uniformity of is improved.
[157] In addition, the warpage of the substrate when the substrate size is large tends to cause a decrease in the production yield and variations in characteristics. However, the installation of the heat conductive member according to the specific example 1 can improve the production yield and reduce the variation in the characteristics.
[158] [Example 2]
[159] The electron source substrate 10 shown in FIG. 25 as in Example 1 was prepared and installed in the manufacturing apparatus of FIG. In this specific example, the mixed gas containing an organic substance was heated to 80 degreeC by the heater provided around the piping 28, and then introduce | transduced into the vacuum container 12. FIG. In addition, the electron source substrate 10 was heated via the heat conductive member 41 using the heater 20 in the support member 11 so that the substrate temperature was 80 ° C. Other than the above, the activation process was performed similarly to the specific example 1, and the electron source was created.
[160] In the electron emission element after the activation process is completed, as shown in FIGS. 23 and 24, a carbon film 29 was formed with a gap 5 therebetween.
[161] Also in this specific example, activation process can be performed for a short time similarly to specific example 1. As a result of measuring the element current If at the end of the activation process in the same manner as in the specific example 1, the increase was about 1.2 times as compared with the specific example 1. In addition, the variation in device current If was about 5%, and an activation process excellent in uniformity could be performed.
[162] This inventor estimates that the effect of reducing the temperature distribution by the heat generation in the activation treatment step by heating and further promoting the chemical reaction in the activation treatment step by heating is generated.
[163] [Example 3]
[164] An electron source was created in the same manner as in Example 1 except that the electron source substrate 10 shown in FIG. 25 was used as the specific example 1, and the silicon oil was used as the heat conducting member using the manufacturing apparatus shown in FIG. .
[165] In the apparatus of the present embodiment, when the silicone oil is injected into the lower portion of the substrate by using a viscous liquid substance introduction tube, the air is positioned at an outer position of the element electrode region at a substantially diagonal position so that no air remains between the lower portion of the substrate and the support member. The through hole which is not shown in figure which combines with drainage and discharge | release of a viscous liquid substance is arrange | positioned. The element current value after completion of the activation treatment was the same as in Example 1.
[166] [Example 4]
[167] This embodiment is another example of the preparation of the electron source. The electron source substrate 10 shown in FIG. 25 prepared in the same manner as in Example 1 using a glass substrate on which a Si0 ₂ layer having a thickness of 3 mm was formed was attached to the vacuum container 12 of the manufacturing apparatus shown in FIG. Between the vacuum chamber 14, a sealing member 18 made of silicon rubber, a heat conductive member 41 made of sheet-like silicone rubber having a cylindrical protrusion on the surface in contact with the electron source substrate 10, and the inside It installed through the heat conductive member 42 made of aluminum which has a buried heater.
[168] In addition, unlike the case shown in FIG. 4, in this specific example, the diffusion plate 19 was not provided, and the activation process was performed.
[169] The valve 25f of the exhaust port 16 side of the vacuum vessel 12 and the valve 25g of the exhaust port 17 side of the subvacuum container 14 are opened to open the inside and the vacuum chamber 14 of the vacuum vessel 12. Was evacuated by vacuum pumps 26a and 26b (here, scroll pump) to about 1.33 × 10 ⁻¹ Pa (1 × 10 ⁻³ Torr).
[170] The exhaust gas was exhausted while maintaining the [ressure in the vacuum vessel 12] ≥ [ressure in the vacuum chamber 14] state. As a result, when the substrate is deformed due to the pressure difference and distortion occurs, the substrate is convex toward the negative vacuum container and pressed against the heat conductive member, and the heat conductive member suppresses the deformation to support the substrate 10.
[171] When the size of the electron source substrate 10 is large and the thickness of the electron source substrate 10 is thin, this state is reversed, that is, [ressure in the vacuum vessel 12] ≤ [ressure in the secondary vacuum vessel 14 When the state is taken and becomes convex toward the vacuum vessel 12 side, there is no member in the vacuum vessel 12 that suppresses and supports the deformation of the electron source substrate 10 due to the difference in pressure. It will be damaged toward the inside of the container 12. In other words, the larger the size of the substrate and the thinner the thickness of the substrate, the more important is the heat conductive member having the role of supporting member of the substrate in the electron source manufacturing apparatus of the present embodiment.
[172] Next, similarly to the specific example 1, a voltage is applied between the electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 using the drive driver 32. The conductive film 4 was then foamed and a gap G shown in FIG. 23 was formed in the conductive film 4. In this embodiment, in order to accelerate the formation of cracks in the conductive film at the same time as the application of voltage, gradually introducing hydrogen gas having a reducing property to palladium oxide up to 533 × 10 ² Pa (about 400 Torr) from a pipe of another system not shown Was carried out.
[173] Subsequently, the activation process was performed using the same apparatus. The gas supply valves 25a to 25d and the gas inlet 15 side valve 25e were opened to introduce a mixed gas of the organic substance gas 21 and the carrier gas 22 into the vacuum vessel 12. . 1% propylene mixed nitrogen gas was used for the organic gas 21, and nitrogen gas was used for the carrier gas 22. Both flow rates were 10 sccm and 400 sccm, respectively. In addition, the mixed gas was introduced into the vacuum chamber 12 after passing the water removal filter 23, respectively. The opening and closing degree of the valve 25f was adjusted while the pressure of the vacuum gauge 27a on the exhaust port 16 side was adjusted so that the pressure in the vacuum vessel 12 was 266 × 10 ² Pa (200 Torr). At the same time, the opening and closing degree of the valve 25g on the exhaust port 17 side of the subvacuum container 14 was adjusted so that the pressure in the subvacuum container 14 was also 266 × 10 ² Pa (200 Torr).
[174] Next, similarly to the specific example 1, a voltage is applied between the electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 using the drive driver 32. Activation was carried out. As a result of measuring the element current If at the time of the activation process in the same manner as in Example 1, the element current If was 1.34 A to 1.53 A, the deviation was about 7%, and good activation treatment could be performed.
[175] In addition, as shown in Figs. 22 and 23, the carbon film 29 was formed in the electron emission element after the activation process was completed with the gap 5 therebetween.
[176] In addition, when the gas analysis on the exhaust port 16 side was carried out using a mass spectrum measuring apparatus equipped with a differential exhaust apparatus not shown in the activation process, the mass gas No. 28 and propylene of nitrogen were simultaneously introduced into the mixed gas. The mass No. 42 of was instantaneously increased and saturated, and both values were constant during the activation process.
[177] In this embodiment, a mixed gas containing an organic substance is placed in a viscous flow region of pressure 266 × 10 ² Pa (200 Torr) in a vacuum vessel 12 provided on an electron source substrate 10 having an electron emission element. Since it was introduced, the organic substance in a container could be made constant for a short time. As a result, the time required for the activation process can be significantly shortened.
[178] [Example 5]
[179] In the present embodiment, the apparatus shown in Fig. 4 is the same as that of Example 4 except that the diffusion plate 19 as shown in Figs. 19 and 20 is provided in the vacuum container 12. By forming the gap G in the conductive film shown in Fig. 23 by the forming process, and the activation process, an electron source was created.
[180] Also in this specific example, activation process can be performed for a short time similarly to specific example 4. In addition, as shown in Figs. 22 and 23, the carbon film 29 was formed in the electron emission element after the activation process was completed with the gap 5 therebetween. When the device current If at the end of the activation process was measured in the same manner as in Example 4, the value of the device current If was 1.36 A to 1.50 A, the variation was about 5%, and the activation process with better uniformity was obtained. I could do it.
[181] [Example 6]
[182] In this embodiment, the apparatus shown in Fig. 4 used in Embodiment 5 is used, and the heater 20 embedded in the heat conducting member 42 is used, and the heater is controlled from an external control device. 41. The electron source substrate 10 was heated to obtain a substrate temperature of 80 deg. C, and the activation was performed by heating to 80 deg. C with a heater provided around the pipe 28. Activation was carried out.
[183] In the electron emission element after the activation process is completed, as shown in Figs. 22 and 23, a carbon film 29 is formed with a gap 5 therebetween.
[184] The device current If after completion of the activation treatment was measured in the same manner as in Example 4, and as a result, it was 1.37 A to 1.48 A, and the variation was about 4%, and good activation treatment could be performed.
[185] [Example 7]
[186] In this embodiment, a silicone rubber sheet which is divided into the heat conductive members 41 and which has a plurality of grooves for providing a non-slip effect on the surface in contact with the substrate is also formed and processed into an uneven shape. Then, using the apparatus shown in Fig. 5 using the thermally conductive spring-like member 43 made of stainless steel, the heater 20 embedded in the lower part of the subvacuum container is controlled by an external control device (not shown), and heat conduction is performed. The electron source was created by the method similar to the specific example 6 except having heated the electron source board | substrate 10 through the spring member 43 and the heat conductive member 41. FIG. As a result, the same good electron source as in Example 6 could be produced.
[187] [Example 8]
[188] In this specific example, the electron source was created in the same manner as in the specific example 7 except that the two processes were performed at the same time every 10 lines when the activation process was performed. When the device current 1f at the end of activation was measured in the same manner as in Example 7, the value of the device current 1f was 1.36A to 1.50A, but the deviation was about 5% although the deviation was slightly larger.
[189] The inventors speculate that this is because more heat is generated as the number of processing lines increases, and heat distribution influences the creation of the electron source.
[190] In the electron source manufacturing apparatus which concerns on the specific example 5 thru | or example 8, since a heat conductive member is provided, it is very effective in the production yield and the characteristic improvement of an electron source board | substrate.
[191] [Example 9]
[192] This embodiment is an example of an image forming apparatus as shown in FIG. 21 applying an electron source created by the present invention. After fixing the electron source substrate 10 that was formed and activated in the same manner as in the specific example 2 on the rear plate 61, the face plate 66 was supported on the support frame 62 5 mm above the electron source substrate 10. ) And through an exhaust pipe (not shown), and sealing was carried out at 420 ° C. in an argon atmosphere using frit glass.
[193] In addition, as shown later, not shown for maintaining the space between the electron source substrate 10 and the face plate 66 so as not to cause damage to the container caused by atmospheric pressure even if the inside of the sealed container is evacuated to atmospheric pressure or lower. The non-member is disposed on the electron source substrate 10.
[194] Next, after evacuating the interior of the container to bring the pressure inside the container to atmospheric pressure or less, the exhaust pipe was sealed to produce an image forming apparatus as shown in Figs. 10A and 10B. And in order to maintain the pressure inside the container after sealing, the process by the high frequency heating method of the getter material which is not shown in the container was performed.
[195] In the image forming apparatus completed as described above, electrons are applied to each of the electron-emitting elements by the signal generating means (not shown) through the container outer terminals Dx1 to Dxm and Dy1 to Dyn, respectively. A high voltage of 5 kV is applied to the metal bag 65 or a transparent electrode (not shown) through the high voltage terminal 67, and the electron beam is accelerated to impinge on the phosphor film 64 to excite and emit light to display an image. did. In the image forming apparatus in this specific example, there was no luminance variation or color unevenness in visual confirmation, and it was possible to display a satisfactory image that could be satisfactorily satisfied as a television.
[196] The manufacturing apparatus and manufacturing method of an electron source according to this embodiment are effective even when applied to manufacture of an image forming apparatus, and can contribute to the improvement of the image quality of the display image. As mentioned above, according to the manufacturing apparatus and manufacturing method of specific examples 1-9, the introduction time of the organic substance in an activation process can be shortened, a manufacturing time can be shortened, and a production yield can also be improved. Moreover, by using such a manufacturing apparatus and a manufacturing method, the electron source excellent in uniformity can be provided.
[197] In addition, the high vacuum evacuation apparatus becomes unnecessary, and the apparatus manufacturing cost can be reduced. In addition, according to such a manufacturing apparatus, since a small vacuum container which covers only the electron emission element part on an electron source board | substrate needs to be provided, the apparatus can be miniaturized.
[198] Moreover, since the extraction wiring part of an electron source board is located in the outer side of a vacuum container, electrical connection of an electron source board and a drive driver can be performed easily.
[199] And by using the electron source created using the manufacturing apparatus of this invention, the image forming apparatus excellent in uniformity can be provided.
[200] [Example 10]
[201] In this embodiment, the electron sources shown in Figs. 22 and 23 were manufactured using the manufacturing apparatus according to the present invention.
[202] First, the Pt paste was printed on the glass substrate on which the SiO ₂ layer was formed by an offset printing method, and thermally calcined to form element electrodes 2 and 3 shown in Fig. 25 having a thickness of 50 nm. Subsequently, Ag paste is printed by screen printing and heated and baked to form the X-direction wiring 7 and the Y-direction wiring 8 shown in FIG. 25, and the X-direction wiring 7 and the Y-direction wiring 8 Insulation paste was printed by the screen printing method at the cross | intersection part of (), and it baked by heating and formed the insulation layer (9).
[203] Next, a palladium inorganic solution is added dropwise between the device electrodes 2 and 3 using a bulb jet spraying device, and heated at 350 ° C. for 30 minutes to form a palladium oxide conductive film 4 shown in FIG. 25. Formed). The film thickness of the conductive film 4 was 20 nm. The electron source substrate 10 in which a plurality of conductors composed of the pair of element electrodes 2 and 3 and the conductive film 4 are matrix-wired by the X-direction wiring 7 and the Y-direction wiring 8 as described above. Was written.
[204] The created electron source substrate 10 shown in FIG. 25 was fixed on the support member 11 of the manufacturing apparatus shown in FIGS. 7 and 8. Next, the stainless steel container 12 is passed through the sealing member 18 made of silicon rubber so that the takeout wiring 30 comes out of the vacuum container 12 as shown in FIG. 10) was installed on. On the electron source board | substrate 10, the metal plate in which the opening part 33 was formed was provided as the diffuser plate 19. As shown in FIG. The opening 33 of the diffusion plate 19 has an opening in the center portion (an intersection of the extension line from the center portion of the gas inlet and the diffusion plate) with a circle of 1 mm in diameter, at intervals of 5 mm in the concentric direction, and in the circumferential direction. It was formed to satisfy the following formula at intervals of 5 °. In addition, the distance L from the center of the gas inlet to the intersection of the extension line from the center of the gas inlet and the diffusion plate was set to 20 mm.
[205] S _d = S _o × [1 + (d / L) ² ] ^1/2
[206] only,
[207] d: distance from the intersection of the extension line and the diffusion plate from the center of the gas inlet
[208] L: Distance from the center of the gas inlet to the intersection of the extension line and the diffuser plate from the center of the gas inlet
[209] S _d : opening area in the distance d from the intersection of the extension line from the center of the gas inlet and the diffusion plate
[210] S _O : Opening area at the intersection of the extension line from the center of the gas inlet and the diffusion plate
[211] The valve 25f on the exhaust port 16 side is opened, and the inside of the container 12 is exhausted to about 1 × 10 ⁻¹ Pa by the vacuum pump 26 (here, a scroll pump), and then the drive driver 32 is used. Voltage is applied between the element electrodes 2 and 3 of each electron-emitting device 6 through the X-direction wiring 7 and the Y-direction wiring 8, and the conductive film 4 is formed to form a film as shown in FIG. The illustrated gap G was formed in the conductive film 4.
[212] Subsequently, the activation process was performed using the same apparatus. In the activation process, the gas supply valves 25a to 25d and the gas inlet 15 side valve 25e shown in FIG. 7 are opened to mix the gas mixture of the organic substance gas 21 and the carrier gas 22. Was introduced into the container 12. 1% ethylene mixed nitrogen gas was used for the organic substance gas 21, and nitrogen gas was used for the carrier gas 22. As shown in FIG. Both flow rates were 40 sccm and 400 sccm. The opening degree of the valve 25f was adjusted while watching the pressure of the vacuum gauge 27 on the exhaust port 16 side, so that the pressure in the container 12 was 1.3 × 10 ⁴ Pa.
[213] Next, the drive driver 32 is used to apply a voltage between the element electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 to perform the activation process. It was done. The voltage was 17 V, the pulse width was 1 msec, the frequency was 100 Hz, and the activation time was 30 minutes. Activation is performed by connecting the unselected lines of the entire Y-direction wiring 8 and the X-direction wiring 7 to Gnd (ground potential), and selecting 10 lines of the X-direction wiring 7 by one line. The pulse voltage of 1 msec was applied sequentially, and the above-mentioned method was repeated to activate the entire line in the X direction.
[214] In the electron emission element after the activation process is completed, as shown in Figs. 22 and 23, a carbon film 29 was formed with a gap 5 therebetween.
[215] As a result of measuring the element current If (current flowing between element electrodes of the electron emitting element) at the end of the activation process for each X-direction wiring, the deviation of the element current If is about 5%, and good activation process can be performed. there was.
[216] Further, as a result of performing gas analysis on the exhaust port 16 side using a mass spectrum measuring device (not shown) equipped with a differential exhaust device during the activation process, the mass No. 28 of nitrogen and ethylene was simultaneously introduced into the mixed gas. Mass No. 26 of the fragment of and ethylene was instantaneously increased and saturated, and both values were constant during the activation treatment process.
[217] In this embodiment, since a mixed gas containing an organic substance is introduced into the vessel 12 provided on the electron source substrate 10 in a viscous flow region of pressure 1.3 × 10 ⁴ Pa, the organic matter in the vessel 12 is short. Material concentration could be made constant. As a result, the time required for the activation treatment step can be significantly shortened.
[218] [Example 11]
[219] In this specific example, the electron source substrate 10 produced in the same manner as in Example 10 was used in the manufacturing apparatus of FIG. 7 until the step before performing the activation treatment.
[220] In this specific example, the mixed gas containing an organic substance was heated to 120 degreeC by the heater provided around the piping 28, and then introduce | transduced into the container 12. As shown in FIG. In addition, the electron source substrate 10 was heated using the heater 20 in the support member 11 so that the substrate temperature was 120 ° C. The activation treatment was performed in the same manner as in Example 1 except for the above.
[221] In the electron emission element after the activation process is completed, as shown in Figs. 22 and 23, a carbon film 29 was formed with a gap 5 therebetween.
[222] Also in this specific example, activation could be performed in the same short time as that of the specific example 10. As a result of measuring the device current If (current flowing between device electrodes of the electron-emitting device) at the end of activation for each X-direction wiring, the device current If increased about 1.2 times compared with that of the first embodiment. In addition, the variation in device current If was about 4%, and activation with excellent uniformity could be performed.
[223] [Example 12]
[224] In this specific example, the electron source substrate 10 shown in FIG. 25 produced up to the step of forming the conductive film 4 in the same manner as the specific example 10 is constructed with the first container 13 and the first device 13 of the manufacturing apparatus shown in FIG. It installed between the two containers 14 via the sealing member 18 made from the silicone rubber, respectively. In this specific example, the diffusion plate 19 was not provided and the activation process was performed.
[225] The valve 25f of the exhaust port 16 side of the first container 13 and the valve 25g of the exhaust port 17 side of the second container 14 are opened to open the inside of the first container 13 and the second container ( The inside of 14 was evacuated by vacuum pumps 26a and 26b (here, scroll pump) to about 1 × 10 ⁻¹ Pa. Next, similarly to the specific example 1, a voltage is applied between the electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 using the drive driver 32. Then, the conductive film 4 was formed to form a gap G shown in FIG. 23 in the conductive film 4.
[226] Subsequently, the activation process was performed using the same apparatus. In the activation process, the gas supply valves 25a to 25d and the gas inlet 15 side valve 25e shown in FIG. 9 are opened to mix the gas mixture of the organic substance gas 21 and the carrier gas 22. Was introduced into the first container (13). 1% propylene mixed nitrogen gas was used for the organic substance gas 21, and nitrogen gas was used for the carrier gas 22. Both flow rates were 10 sccm and 400 sccm, respectively. In addition, the mixed gas was introduced into the first vessel 13 after passing the water removal filter 23, respectively. The opening degree of the valve 25f was adjusted while the pressure of the vacuum gauge 27a on the exhaust port 16 side was adjusted so that the pressure in the first vessel 13 was 2.6 × 10 ⁴ Pa.
[227] At the same time, the opening degree of the valve 25g on the exhaust port 17 side of the second vessel 14 was adjusted to set the pressure in the second vessel 14 to 2.6 × 10 ⁴ Pa.
[228] Next, similarly to the specific example 10, a voltage is applied between the element electrodes 2 and 3 of each of the electron-emitting devices 6 through the X-direction wiring 7 and the Y-direction wiring 8 using the drive driver 32. The activation process was performed by applying.
[229] In the electron emission element after the activation process is completed, as shown in Figs. 22 and 23, a carbon film 29 was formed with a gap 5 therebetween.
[230] When the element current If (current flowing between element electrodes of the electron emission element) at the end of the activation process was measured for each X-direction wiring, the variation in the element current If was about 8%.
[231] Further, as a result of performing gas analysis on the exhaust port 16 side using a mass spectrum measuring device (not shown) equipped with a differential exhaust device at the time of the activation process, the mass gas No. 28 and propylene of nitrogen were simultaneously introduced with the mixed gas. The mass No. 42 of was instantaneously increased and saturated, and both values were constant during the activation treatment process.
[232] In this embodiment, since a mixed gas containing an organic substance is introduced into the first vessel 13 provided on the electron source substrate 10 having the electron emission element in a viscous flow region at a pressure of 2.6 × 10 ⁴ Pa, In a short time, the concentration of organic substances in the container could be made constant. As a result, the time required for activation could be greatly reduced.
[233] [Example 13]
[234] In the same manner as in the specific example 12, the electron source substrate 10 carried out until the activation treatment was used, and the electron source substrate 10 was installed in the manufacturing apparatus of FIG. In this embodiment, the activation process was performed in the same manner as in Example 12 except that the diffusion plate 19 as shown in FIGS. 10A and 10B was provided in the container 13.
[235] Also in this embodiment, the carbon film 29 was formed in the electron emission element after the activation process was completed with the gap 5 therebetween as shown in FIGS. 22 and 23.
[236] In addition, the opening part 33 of the diffuser plate 19 makes the opening part in a center part (an intersection of the extension line from the center part of a gas inlet port, and a diffuser plate) circular shape of 1 mm in diameter, 5 mm intervals in a concentric direction, and In the circumferential direction, it formed so that it might satisfy the following formula at intervals of 5 degrees. In addition, the distance L from the center of the gas inlet to the intersection of the extension line from the center of the gas inlet and the diffusion plate was set to 20 mm.
[237] S _d = S _o × [1 + (d / L) ² ] ^1/2
[238] only,
[239] d: distance from the intersection of the extension line and the diffusion plate from the center of the gas inlet
[240] L: Distance from the center of the gas inlet to the intersection of the extension line and the diffuser plate from the center of the gas inlet
[241] S _d : opening area in the distance d from the intersection of the extension line from the center of the gas inlet and the diffusion plate
[242] S _o : Opening area at the intersection of the extension line from the center of the gas inlet and the diffusion plate
[243] Also in this specific example, activation could be performed in the same short time as that of specific example 12. In addition, as a result of measuring the device current If (current flowing between the device electrodes of the electron-emitting device) at the end of activation for each X-direction wiring, the deviation of the device current If is about 5%, and excellent in uniformity. The activation process could be performed.
[244] [Example 14]
[245] In this specific example 14, the image forming apparatus shown in the figure was produced by applying the electron source created by the present invention.
[246] After fixing the electron source substrate 10 subjected to the forming process and the activation process in the same manner as in the specific example 11 on the rear plate 61 as shown in Fig. 21, the face plate 66 is supported 5 mm above the substrate. It was arrange | positioned via the frame 62 and the exhaust pipe (not shown), and sealing was performed at 420 degreeC in argon atmosphere using frit glass. Next, after exhausting the inside of the container, the exhaust pipe was sealed to produce a display panel of the image forming apparatus as shown in FIG.
[247] Finally, in order to maintain the pressure after sealing, getter processing was performed by a high frequency heating method.
[248] An image forming apparatus is formed by connecting necessary driving means to the display panel completed as described above, and a signal not showing a scan signal and a modulated signal through each of the electron-emitting elements through the container outer terminals Dx1 to Dxm and Dy1 to Dyn. Electrons are emitted by applying from the generating means, respectively, and a high voltage of 5 kV is applied to the metal bag 65 or the transparent electrode (not shown) through the high voltage terminal 67, and the electron beam is accelerated to collide with the fluorescent film 64. The image was displayed by excitation and light emission.
[249] In the image forming apparatus of this specific example, there was no luminance variation or color unevenness in visual confirmation, and a good image that could be satisfactorily satisfied as a television could be displayed.
[250] According to the manufacturing apparatus of the specific examples 10-14 mentioned above, the introduction time of the organic substance in an activation process can be shortened and a manufacturing time can be shortened. In addition, a high vacuum evacuation device becomes unnecessary, and manufacturing cost can be reduced.
[251] Moreover, according to such a manufacturing apparatus, since the container which only covers the electron emission element part on an electron source board | substrate needs to be provided, the apparatus can be miniaturized. In addition, since the extraction wiring portion of the electron source substrate is located outside the container, electrical connection between the electron source substrate and the drive driver can be easily performed.
[252] Moreover, by using such a manufacturing apparatus, the electron source and the image forming apparatus excellent in uniformity can be provided.
[253] [Example 15]
[254] A plurality of surface conduction electron-emitting devices shown in Fig. 24 were fabricated in which an image forming apparatus is provided with electron sources in matrix wiring. The produced electron source substrate was a simple matrix arrangement of 640 pixels in the X direction and 480 pixels in the Y direction, and a phosphor was placed at a position corresponding to each pixel to form an image forming apparatus capable of color display. In addition, the surface conduction electron emission element in this specific example was produced by performing a forming process and an activating process on the electroconductive film which consists of PdO microparticles similarly to the said specific example.
[255] Each line after the electron source substrate of the matrix configuration was connected to the exhaust device 135 shown in Figs. 11 and 12, and exhausted to a pressure of 1 x 10 ^-5 Pa in the same manner as described in the above embodiment. The foaming process was performed by applying a voltage to the gap, and the gap G shown in FIG. 23 was formed in the conductive film 4. After the forming process is completed, acetone is introduced from the gas introduction line 138, and the activation process is performed by applying a voltage to each line similarly to the forming process, with the gap 5 interposed therebetween as shown in Figs. The carbon film 4 was formed and the electron source substrate was produced. Thereafter, a voltage was appropriately applied to the X-direction electrode and the Y-direction electrode, and the current value flowing through each of the 640 x 480 elements was measured. As a result, it was found that the five elements were in a state in which no current flows. Thus, a Pd0 conductive film is formed on the defective portion again, and the forming process and the activation process are performed as described above. As a result, the defective portion is regenerated to form an 640 x 480 electron emission element on the electron source substrate without a defect. there was. The electron source substrate 71 thus obtained is aligned with the face plate on which the glass frame made of the external device 88 and the phosphor are arranged, and then sealed with low melting glass to be panelized, vacuum evacuated, baked, The image forming apparatus panel was completed through the sealing step.
[256] [Example 16]
[257] 13 is a schematic view of the manufacturing apparatus of the image forming apparatus in this embodiment. In the same figure, reference numeral 110 denotes an element forming substrate, 74 an electron emission element, 153 a vacuum chamber, 132 an exhaust pipe, 155 a 0 ring, and 166 a baking heater. In the same manner as in Example 15, the electron source forming substrates on which the plurality of surface conduction electron emission devices were matrix-wired were evacuated to a pressure of 1 × 10 ⁻⁷ Pa from the front and rear surfaces thereof, followed by forming and activation. The activation treatment was performed by sequentially energizing in a benzonitrile atmosphere of 1 × 10 ⁻⁴ Pa. After completion of the activation process, the chamber and the element formation substrate were baked at 250 ° C. by the heating baking heater 166 disposed in the vacuum chamber 153 as it was. Then, the image forming apparatus panel was completed by positioning with a face plate and a support frame, and sealing.
[258] According to the manufacturing method and manufacturing apparatus of the specific examples 15 and 16 demonstrated above, the following effects can be acquired.
[259] (1) The product including the electron source substrate It is possible to detect a defect of the electron source substrate before assembling the external device, and by repairing the defective portion, it is possible to manufacture an external device surrounding the electron source substrate which is free of defects at all times. .
[260] (2) By vacuum evacuation from both the front and back surfaces of the electron source substrate, it becomes possible to use a thin glass substrate as the electron source substrate.
[261] [Example 17]
[262] Also in this embodiment, a plurality of the surface conduction electron-emitting devices shown in Figs. 22 and 23 have fabricated an image forming apparatus having an electron source matrix wired as shown in Fig. 24.
[263] This specific example is demonstrated below.
[264] First, 100 nm of IT0 film | membrane was formed in the back surface of a glass substrate by the sputtering method. The said ITO film is used as an electrode of an electrostatic chuck at the time of manufacture of an electron source, and if the resistivity is 10 ⁹ ohmcm or less, it will not be limited to the material, A semiconductor, a metal, etc. can be used. On the surface of the glass substrate, a plurality of row directional wirings 7, a plurality of column directional wirings 8 and matrix wires formed by these wirings as shown in FIG. The conductive film 4 which consists of 3) and Pd0 was formed, and the element formation board | substrate 10 was produced. Next, subsequent steps were performed using the manufacturing apparatus shown in FIG.
[265] In Fig. 14, reference numeral 202 denotes a vacuum chamber, 203 denotes 0 ring, 204 denotes benzonitrile which is an activating gas, 205 denotes an ionization vacuum gauge, 206 denotes a vacuum exhaust system, 207 denotes a substrate holder, and 208 denotes a substrate holder 207. Installed electrostatic chuck, 209 is an electrode embedded in the electrostatic chuck 208, 210 is a high-voltage power supply for applying a DC high voltage to the electrode 209, 211 is a groove engraved on the surface of the electrostatic chuck 208, 212 is an electric heater, 213 is a cooling unit, 214 is a vacuum exhaust system, 215 is a probe unit which is in electrical contact with a part of the wiring on the element formation substrate 10, 216 is a pulse generator connected to the probe unit 215, and V1 to V3 are valves.
[266] The element formation substrate 10 was mounted on the substrate holder 207, the valve V2 was opened to evacuate the inside of the groove 211 to 100 Pa or less, and vacuum-adsorbed to the electrostatic chuck 208. At this time, the ITO film on the back surface of the element formation substrate 10 was grounded to the cathode side of the high voltage power supply 210 and the coin by a contact pin (not shown). Then, a 2 kV DC voltage was supplied to the electrode 209 from the high voltage power supply 210 (the cathode side was grounded), and the element formation substrate 10 was electrostatically adsorbed on the electrostatic chuck 208. Next, V2 was closed and V3 was opened to introduce He gas into the groove 211 and kept at 500 Pa. He gas has an effect of improving the thermal conductivity between the element formation substrate 201 and the electrostatic chuck 208. In addition, He gas is most suitable, however, N _2, may also be used gases such as Ar, if it can achieve the desired thermal conductivity is not limited to the gas species. Next, the vacuum chamber 202 is mounted on the element formation substrate 10 via the 0 ring 203 so that the wiring end portion comes out of the vacuum chamber 202 and is vacuum sealed in the vacuum chamber 202. One space was made and the same space was evacuated by the vacuum exhaust system 206 until the pressure became 1 * 10 <^-5> Pa or less. Cooling water having a water temperature of 15 ° C. is flowed to the cooling unit 213, and electric power is supplied to the electric heater 212 from a power source (not shown) having a temperature control function, and the element formation substrate 10 is subjected to a constant temperature of 50 ° C. Kept as.
[267] Next, the probe unit 215 is electrically contacted with an end portion of the wiring on the element formation substrate 10 which is exposed to the outside of the vacuum chamber 202 and bottomed from the pulse generator 216 connected to the probe unit 215. A triangular pulse having a side length of 1 msec, a period of 10 msec, and a crest value of 10 V was applied for 120 sec to form a forming process. The heat generated by the current flowing in the forming process is efficiently absorbed by the electrostatic chuck 208, the element formation substrate 10 is maintained at a constant temperature of 50 ℃ can perform a good forming process, and also the thermal stress It was also possible to prevent breakage.
[268] Through the above forming process, the gap G shown in FIG. 23 was formed in the conductive film 4.
[269] Next, the current flowing through the electric heater 212 was adjusted to maintain the element formation substrate 10 at a constant temperature of 60 ° C. V1 was opened and benzonitrile having a pressure of 2 × 10 ⁻⁴ Pa was introduced while measuring the pressure in the vacuum chamber 202 with an ionization vacuum gauge 205. An activation process was performed by applying a triangular pulse having a bottom side of 1 msec, a cycle of 10 msec, and a crest value of 15 V from the pulse generator 216 through the probe unit 215 for 60 minutes. As in the forming process, heat generated by the current flowing during the activation process is efficiently absorbed by the electrostatic chuck 208, and the element formation substrate 10 is maintained at a constant temperature of 60 deg. In addition, it was also possible to prevent breakage due to thermal stress.
[270] As a result of the above activation process, as shown in Figs. 22 and 23, the carbon film 29 was formed with the gap 5 therebetween.
[271] The element formation board | substrate 10 which completed the above process was aligned with the face plate which arrange | positioned the glass frame and fluorescent substance, and it sealed-attached using the low melting glass, and produced the vacuum external apparatus. Then, a process such as vacuum evacuation, baking, sealing process, and the like was performed in the external device to produce an image forming panel shown in FIG.
[272] By implementing this embodiment, since the electrostatic chuck 208 and He gas were used in the forming process and the activating process, it is possible to form a good surface conduction electron-emitting device with excellent characteristics, and improve image uniformity. It was possible to manufacture an image forming panel having the same, and also to prevent breakage due to thermal stress, thereby improving production yield.
[273] According to the present invention, it is possible to provide an apparatus for manufacturing an electron source that can be downsized and simplified in operability.
[274] Moreover, according to this invention, a manufacturing speed can be improved and the manufacturing method of the electron source suitable for mass productivity can be provided.
[275] Moreover, according to this invention, the manufacturing apparatus and manufacturing method of an electron source which can manufacture the electron source excellent in the electron emission characteristic can be provided.
[276] Moreover, according to this invention, the image forming apparatus excellent in image quality can be provided.

权利要求:
Claims (43)
[1" claim-type="Currently amended] In the electron source manufacturing apparatus,
A support member for supporting the substrate on which the conductor is formed;
A container having a gas introduction port and a gas exhaust port and covering a portion of the substrate surface;
Means for introducing a gas into the vessel, connected to an inlet of the gas,
Means for exhausting the interior of the container, connected to an exhaust port of the gas,
And a means for applying a voltage to the conductor.
[2" claim-type="Currently amended] The electron source manufacturing apparatus according to claim 1, wherein the support member is provided with means for fixing the substrate on the support member.
[3" claim-type="Currently amended] The electron source manufacturing apparatus according to claim 1, wherein the support member includes a means for vacuum suction of the substrate and the support member.
[4" claim-type="Currently amended] The electron source manufacturing apparatus according to claim 1, wherein the support member includes a means for electrostatically adsorbing the substrate and the support member.
[5" claim-type="Currently amended] The said support member is equipped with the heat conductive member, The manufacturing apparatus of the electron source in any one of Claims 1-4 characterized by the above-mentioned.
[6" claim-type="Currently amended] The said support member is equipped with the temperature control mechanism of the said board | substrate, The manufacturing apparatus of the electron source in any one of Claims 1-5 characterized by the above-mentioned.
[7" claim-type="Currently amended] The said support member is equipped with the heat generating means, The manufacturing apparatus of the electron source in any one of the Claims 1-5 characterized by the above-mentioned.
[8" claim-type="Currently amended] The said support member is equipped with the cooling means, The manufacturing apparatus of the electron source in any one of Claims 1-5 characterized by the above-mentioned.
[9" claim-type="Currently amended] The said container is a manufacturing apparatus of the electron source as described in any one of Claims 1-8 provided with the means which diffuses the gas introduce | transduced in the said container.
[10" claim-type="Currently amended] The electron source manufacturing apparatus according to any one of claims 1 to 9, further comprising means for heating the gas to be introduced.
[11" claim-type="Currently amended] The electron source manufacturing apparatus according to any one of claims 1 to 10, further comprising means for removing water in the gas to be introduced.
[12" claim-type="Currently amended] In the electron source manufacturing method,
Arranging a substrate on which the conductor and the wiring connected to the conductor are formed on the support member;
Covering the conductor on the substrate with a container except a portion of the wiring;
Making the inside of the container a desired atmosphere;
And a step of applying a voltage to the conductor through the wiring of the part.
[13" claim-type="Currently amended] The method of manufacturing an electron source according to claim 12, wherein the step of making the inside of the container a desired atmosphere includes a step of evacuating the inside of the container.
[14" claim-type="Currently amended] The method for producing an electron source according to claim 12 or 13, wherein the step of making the inside of the container a desired atmosphere includes a step of introducing a gas into the container.
[15" claim-type="Currently amended] The manufacturing method of the electron source as described in any one of Claims 12-14 which further has a process of fixing the said board | substrate on the said support member.
[16" claim-type="Currently amended] The method of manufacturing an electron source according to claim 15, wherein the step of fixing the substrate on the support member includes a step of vacuum suction of the substrate and the support member.
[17" claim-type="Currently amended] The method of manufacturing an electron source according to claim 15, wherein the step of fixing the substrate on the support member includes a step of electrostatically adsorbing the substrate and the support member.
[18" claim-type="Currently amended] 18. The method of manufacturing an electron source according to any one of claims 12 to 17, wherein the step of disposing the substrate on the support member is performed by disposing a heat conductive member between the substrate and the support member. .
[19" claim-type="Currently amended] 19. The method of manufacturing an electron source according to any one of claims 12 to 18, wherein the step of applying a voltage to the conductor includes a step of adjusting the temperature of the substrate.
[20" claim-type="Currently amended] The method of manufacturing an electron source according to any one of claims 12 to 18, wherein the step of applying a voltage to the conductor includes the step of heating the substrate.
[21" claim-type="Currently amended] The method of manufacturing an electron source according to any one of claims 12 to 18, wherein the step of applying a voltage to the conductor includes a step of cooling the substrate.
[22" claim-type="Currently amended] In the electron source manufacturing method,
Arranging a plurality of elements including a pair of electrodes and a conductive film disposed between the pair of electrodes and a substrate on which a wiring for connecting the plurality of elements is formed on a support member;
Covering a plurality of elements on the substrate with a container except a portion of the wiring;
Making the inside of the container a desired atmosphere;
And a step of applying a voltage to the plurality of devices via the partial wirings.
[23" claim-type="Currently amended] In the electron source manufacturing method,
A plurality of elements including a pair of electrodes and a conductive film disposed between the pair of electrodes and a substrate on which a plurality of X-direction wirings and a plurality of Y-direction wirings are formed by matrix wiring of the plurality of elements are supported on a supporting member. Process to place in,
Covering a plurality of elements on the substrate with a container except for the portions of the plurality of X-directional wirings and the plurality of Y-directional wirings;
Making the inside of the container a desired atmosphere;
And a step of applying a voltage to the plurality of devices through the X-direction wiring and the Y-direction wiring of the part.
[24" claim-type="Currently amended] The method for producing an electron source according to claim 22 or 23, wherein the step of making the inside of the container a desired atmosphere includes a step of evacuating the inside of the container.
[25" claim-type="Currently amended] The method for producing an electron source according to any one of claims 22 to 24, wherein the step of making the interior of the container a desired atmosphere includes a step of introducing a gas into the container.
[26" claim-type="Currently amended] The manufacturing method of the electron source as described in any one of Claims 22-25 which further has a process of fixing the said board | substrate on the said support member.
[27" claim-type="Currently amended] 27. The method of manufacturing an electron source according to claim 26, wherein the step of fixing the substrate on the support member includes a step of vacuum suction of the substrate and the support member.
[28" claim-type="Currently amended] 27. The method of manufacturing an electron source according to claim 26, wherein the step of fixing the substrate on the support member includes a step of electrostatically adsorbing the substrate and the support member.
[29" claim-type="Currently amended] 29. The method of manufacturing an electron source according to any one of claims 22 to 28, wherein the step of disposing the substrate on the support member is performed by disposing a heat conductive member between the substrate and the support member. .
[30" claim-type="Currently amended] The method of manufacturing an electron source according to any one of claims 22 to 29, wherein the step of applying a voltage to the device includes a step of adjusting the temperature of the substrate.
[31" claim-type="Currently amended] The method of manufacturing an electron source according to any one of claims 22 to 29, wherein the step of applying a voltage to the device includes the step of heating the substrate.
[32" claim-type="Currently amended] The method of manufacturing an electron source according to any one of claims 22 to 29, wherein the step of applying a voltage to the device includes a step of cooling the substrate.
[33" claim-type="Currently amended] In the electron source manufacturing method,
Arranging a plurality of elements including a pair of electrodes and a conductive film disposed between the pair of electrodes and a substrate on which a wiring for connecting the plurality of elements is formed on a support member;
Covering a plurality of elements on the substrate with a container except a portion of the wiring;
Making the inside of the container a first atmosphere;
Applying a voltage to the plurality of devices under the first atmosphere via the partial wiring;
Making the inside of the container a second atmosphere;
And applying a voltage to the plurality of devices under the second atmosphere via the partial wirings.
[34" claim-type="Currently amended] In the electron source manufacturing method,
A plurality of elements including a pair of electrodes and a conductive film disposed between the pair of electrodes and a substrate on which a plurality of X-direction wirings and a plurality of Y-direction wirings are formed by matrix wiring of the plurality of elements are supported on a supporting member. Process to place in,
Covering a plurality of elements on the substrate with a container except for the portions of the plurality of X-directional wirings and the plurality of Y-directional wirings;
Making the inside of the container a first atmosphere;
Applying a voltage to the plurality of devices under the first atmosphere through the partial X-direction wiring and the Y-direction wiring;
Making the inside of the container a second atmosphere;
And applying a voltage to the plurality of devices under the second atmosphere via the partial X-direction wiring and the Y-direction wiring.
[35" claim-type="Currently amended] 35. The method of manufacturing an electron source according to claim 33 or 34, wherein the step of making the inside of the container a first atmosphere comprises the step of exhausting the inside of the container.
[36" claim-type="Currently amended] 36. The production of an electron source according to any one of claims 33 to 35, wherein the step of making the interior of the container a second atmosphere includes introducing a gas containing a carbon compound into the container. Way.
[37" claim-type="Currently amended] The manufacturing method of the electron source as described in any one of Claims 33-36 which further has a process of fixing the said board | substrate on the said support member.
[38" claim-type="Currently amended] The method of manufacturing an electron source according to claim 37, wherein the step of fixing the substrate on the support member includes a step of vacuum suction of the substrate and the support member.
[39" claim-type="Currently amended] 38. The method of manufacturing an electron source according to claim 37, wherein the step of fixing the substrate on the support member includes a step of electrostatic adsorption of the substrate and the support member.
[40" claim-type="Currently amended] 40. The method of manufacturing an electron source according to any one of claims 33 to 39, wherein the step of disposing the substrate on the support member is performed by disposing a heat conductive member between the substrate and the support member. .
[41" claim-type="Currently amended] 41. The method of manufacturing an electron source according to any one of claims 33 to 40, wherein the step of applying a voltage to the element includes a step of adjusting the temperature of the substrate.
[42" claim-type="Currently amended] 41. The method of any one of claims 33 to 40, wherein the step of applying a voltage to the device comprises the step of heating the substrate.
[43" claim-type="Currently amended] 41. The method of any one of claims 33 to 40, wherein applying a voltage to the device comprises cooling the substrate.

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同族专利:

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公开号 | 公开日

---

US6726520B2|2004-04-27|

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JP2000311594A|2000-11-07|

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WO2000014761A1|2000-03-16|

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US20040154545A1|2004-08-12|

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US7189427B2|2007-03-13|

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CN1317145A|2001-10-10|

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CN100377276C|2008-03-26|

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JP3320387B2|2002-09-03|

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US20010036682A1|2001-11-01|

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TW488151B|2002-05-21|

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KR100424031B1|2004-03-22|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1998-09-07|Priority to JP25303798

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1998-09-07|Priority to JP98-253037

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1999-02-25|Priority to JP4780599

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1999-02-25|Priority to JP99-047805

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1999-02-25|Priority to JP4813499

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1999-02-25|Priority to JP99-048134

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1999-09-01|Priority to JP99-247930

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1999-09-01|Priority to JP24793099A

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1999-09-07|Application filed by 미다라이 후지오, 캐논 가부시끼가이샤

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2001-08-09|Publication of KR20010074968A

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2004-03-22|Application granted

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2004-03-22|Publication of KR100424031B1

优先权:

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申请号 | 申请日 | 专利标题

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JP25303798|1998-09-07|

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JP98-253037|1998-09-07|

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JP4813499|1999-02-25|

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JP99-048134|1999-02-25|

---

JP4780599|1999-02-25|

---

JP99-047805|1999-02-25|

---

JP99-247930|1999-09-01|

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JP24793099A|JP3320387B2|1998-09-07|1999-09-01|Apparatus and method for manufacturing electron source|